【摘要】 对CuxSiyO结构的阻变存储器(RRAM)进行了总剂量(TID)以及单粒子辐照(SEE)实验。总剂量实验中,1T1R样品分别接受总剂量为1,2和3 k Gy(Si O2)的60Coγ射线辐射。样品中没有出现低阻在辐照后翻转的现象。单粒子辐照实验中,16 kbit RRAM阵列样品分别接受线性能量转移(LET)值最高达75 Me V的4种离子束的辐射。样品中没有出现低阻在辐照后翻转的现象。除一组无翻转外,存储单元的高阻到低阻的翻转率皆在0.06%左右。实验结果证实了RRAM中已经形成的导电通道不会受辐照影响,因此不存在低阻翻转为高阻的现象。更多还原

【Abstract】 The single event effects( SEE) and total ionizing dose( TID) effects on a CuxSiyObased resistive random access memory( RRAM) were investigated. 1T1 R cells were irradiated under γrays generated from a60 Co source to a total dose of 1,2 and 3 k Gy( Si O2). The low-resistance state( LRS) of the RRAM shows no upsets after irradiation. In the single ion radiate experiment,16 kbit RRAM arrays are irradiated under heavy ion rays of four different linear energy transfer( LETs) up to75 Me V. LRS of the RRAM shows no upsets after irraditionas well. Around 0. 06% of high-resistance state( HRS) cells in every experiment group change into LRS,except for one group where no upsets are observed. The results show that conductive filament in RRAM,once formed,is not likely to be affected by radiation,hence the absence of LRS upset.更多还原