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Properties of p-type ZnO thin films with different orientations

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【作者】 戴丽萍； 王姝娅； 钟志亲； 张国俊；

【Author】 DAI Li-ping;WANG Shu-ya;ZHONG Zhi-qin;ZHANG Guo-jun;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China;

【机构】 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China；

【摘要】 The stable properties of N-doped p-type ZnO thin films with preferential nonpolar(100) plane orientation relative to polar(002) plane orientation are investigated. The two kinds of oriented thin films are fabricated by the methods of post heat treatment and double sources in situ, respectively. The Hall investigations demonstrate that N-doped p-type ZnO thin films with preferential nonpolar(100) plane orientation are more stable,and the results are also proved by build-in electric field model and electronic structure calculations of the films based on the first principle.

【Abstract】 The stable properties of N-doped p-type ZnO thin films with preferential nonpolar(100) plane orientation relative to polar(002) plane orientation are investigated. The two kinds of oriented thin films are fabricated by the methods of post heat treatment and double sources in situ, respectively. The Hall investigations demonstrate that N-doped p-type ZnO thin films with preferential nonpolar(100) plane orientation are more stable,and the results are also proved by build-in electric field model and electronic structure calculations of the films based on the first principle.

【关键词】 preferential； polar； decomposing； photoelectron； hexagonal； doping； disperse； crystalline； subsequent； tempera；
【基金】 supported by the National Natural Science Foundation of China(No.61204088);the Fundamental Research Funds for the Central Universities(No.ZYGX2011J029)
  • 【文献出处】 Optoelectronics Letters ,光电子快报(英文版) , 编辑部邮箱 ,2014年02期
  • 【分类号】TN304.21
  • 【下载频次】23
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