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一种高压集成电容结构的可靠性研究

Study on Reliability of a High Voltage Integrated Capacitor Structure

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【作者】 王坤谭开洲唐昭焕殷万军罗俊黄磊王斌

【Author】 WANG Kun;TAN Kaizhou;TANG Zhaohuan;YIN Wanjun;LUO Jun;HUANG Lei;WANG Bin;Chongqing University of Posts and Telecommunications;Science and Technology on Analog Integrated Circuit Laboratory;Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp.;

【机构】 重庆邮电大学模拟集成电路重点实验室中国电子科技集团公司第二十四研究所

【摘要】 针对一种下极板独立的700V高压集成电容,进行了瞬态可靠性研究。研究表明,随着电容下极板尺寸的增加,电容的瞬态可靠性下降。用器件仿真软件MEDICI计算得出,在瞬态电压上升沿为200ns的情况下,电容下极板最大可靠宽度为124μm;同时,还得出一系列上升沿时间小于200ns的电容结构下极板最大可靠宽度。

【Abstract】 Transient reliability of a high voltage integrated capacitor with independent lower plate operating at 700V was investigated.It has been demonstrated that transient reliability of the capacitor declined as its lower plate size increased.Results from MEDICI simulation indicated that the maximum safe width of the capacitor’s lower plate was 124μm for transient voltage rising edge of 200ns,and a series of maximum safe width for capacitors with transient voltage rising edge less than 200ns were also calculated.

【关键词】 高压集成电路电容可靠性
【Key words】 High voltage ICCapacitorReliability
  • 【文献出处】 微电子学 ,Microelectronics , 编辑部邮箱 ,2014年01期
  • 【分类号】TN406
  • 【下载频次】70
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