【摘要】 研究长波长InAsSb半导体材料在退火处理前、后,傅里叶变换红外(FTIR)透射光谱、组份元素In、Sb和As在外延层中的分布以及电学性质的变化。用熔体外延(ME)技术,在InAs衬底上生长InAs0.05Sb0.95外延层,外延层的厚度达到100μm。在350℃下,在氢气氛中对样品进行了11h的退火。测量结果表明,退火处理使InAsSb样品的电子迁移率从300K下的43600cm2/(V·s)提高到77K下的48300cm2/(V·s),材料的电学性能及元素分布均匀性得到了明显改善。更多还原

【Abstract】 Fourier transform infrared(FTIR) transmission spectra,the distribution of composition elements In,Sb and As,and electrical properties of InAsSb materials with long-wavelength were studied before and after annealing process.In As0.05Sb0.95 epilayers were grown on In As substrates by melt epitaxy(ME) technology.The thickness of the epilayers reached 100 μm.The annealing treatments of the samples were carried out for 11 hours at 350 ℃ in hydrogen ambient.The results show that electron mobilities of InAsSb samples increase from 43600 cm2/(V·s) at 300 K to 48300 cm2/(V·s) at 77 K by annealing.The electrical performance and elements distribution homogeneity of the materials are obviously improved.更多还原