【摘要】 共振隧穿器件由于其具有高频高速的特点,适用于制作太赫兹波段的振荡源器件。本文主要针对太赫兹波段的共振隧穿二极管(RTD)的振荡特性进行模拟仿真。利用等效电路理论和Pspice软件对共振隧穿振荡器(RTO)的等效电路模型进行振荡频率和功率的模拟计算。在理论计算中将隧穿和渡越时间效应以及寄生元件等制约因素都进行了分析,结果表明通过改进RTD和缝隙天线的结构,共振隧穿振荡器的振荡频率可达1.2THz,输出功率可达到115?W。并且在Pspice仿真环境下进行验证,结果也与理论计算较为相符。更多还原

【Abstract】 Because of its high frequency and high speed, resonant tunneling device is suitable for the terahertz oscillator source device. In this paper, the oscillation characteristic of resonant tunneling diodes in THz wave range is simulated. The equivalent circuit theory and Pspice software are used on resonant tunneling oscillator equivalent circuit model for the oscillation frequency and power simulation. In the theoretical calculation, the tunneling and transit-time effects and parasitic elements are analyzed, and the results indicate that by improving the RTD and slot antenna structure, resonant tunneling oscillation frequency can reach 1.2 THz, and the output power can reach 115μW. In the Pspice simulation, the results are more consistent with the theoretical calculation.更多还原