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Effects of the p-AlInGaN/GaN superlattices’ structure on the performance of blue LEDs

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【作者】 刘娜； 伊晓燕； 梁萌； 郭恩卿； 冯向旭； 司朝； 姬小利； 魏学成； 路红喜； 刘志强； 张宁； 王军喜； 李晋闽；

【Author】 Liu Na;Yi Xiaoyan;Liang Meng;Guo Enqing;Feng Xiangxu;Si Zhao;Ji Xiaoli;Wei Xuecheng;Lu Hongxi;Liu Zhiqiang;Zhang Ning;Wang Junxi;Li Jinmin;Research and Development Center for Semiconductor Lighting,Chinese Academy of Sciences;

【机构】 Research and Development Center for Semiconductor Lighting,Chinese Academy of Sciences；

【摘要】 The advantages of the p-AlInGaN/GaN superlattices’(SLs) structure as an electron blocking layer(EBL) for InGaN blue light-emitting diodes(LEDs) were studied by experiment and APSYS simulation. Electroluminescence(EL) measurement results show that the LEDs with the p-AlInGaN/GaN SLs’ structure EBL exhibited better optical performance compared with the conventional AlGaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency,and the confinement of electrons’ overflow between multiple quantum-wells(MQWs) and EBL.

【Abstract】 The advantages of the p-AlInGaN/GaN superlattices’(SLs) structure as an electron blocking layer(EBL) for InGaN blue light-emitting diodes(LEDs) were studied by experiment and APSYS simulation. Electroluminescence(EL) measurement results show that the LEDs with the p-AlInGaN/GaN SLs’ structure EBL exhibited better optical performance compared with the conventional AlGaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency,and the confinement of electrons’ overflow between multiple quantum-wells(MQWs) and EBL.

【关键词】 EBL； p-AlInGaN/GaN SLs； multiple quantum-wells；
【Key words】 EBL； p-AlInGaN/GaN SLs； multiple quantum-wells；
【基金】 Project supported by the National High Technology Program of China(Nos.2011AA03A105,2013AA03A101)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2014年02期
  • 【分类号】TN312.8
  • 【被引频次】3
  • 【下载频次】42
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