【摘要】 利用磁控溅射、光刻和剥离技术在玻璃基底上成功制备了平栅型氧化锡表面传导电子发射源,并测试其场发射性能。扫描电镜和光学显微镜测试表明,沉积在阴极和栅极之间的氧化锡为不连续薄膜,直径大约在100~200 nm。场发射测试表明,电子发射源的传导电流和发射电流完全被栅压控制。在阳压和栅压分别为3200 V和210 V时,阴阳间距为500 Lm时,平栅型氧化锡表面传导电子发射源的电子发射效率为0.85%,发光亮度为850 cd/m2,表明氧化锡薄膜在表面传导电子发射源方面有着较好的应用潜力。更多还原

【Abstract】 The surfaceconduction electronemission source, based on plana-rgate triode with SnO2 film emitters, has been successfully fabricaed on glass substrate by magnetron sputtering, photolithography, and lift-off technology. The microstructures and field emission characteristics were characterized with scanning electron microscopy( SEM) and optical microscopy. Theresults show that the islands of tin oxide, about 100~ 300 nm in diameter, were depost ied at the gap between the cathode and gate electrode, and that the gate voltage was capable of effectively controlling the emission and conduction currents. The electronemission efficiency was found to be around 0. 85% and the maximun brightness could reach 850 cd/ m2, indicating that the SnO2 film may be a good material for fabrication of surfaceconduction electronconduction electronemission source based on planar-gate triode.更多还原