【摘要】 基于二维器件仿真工具,研究了量子效应和小型化对双栅隧穿场效应晶体管的特性和可靠性的影响。隧穿晶体管中的量子效应除了带间隧穿,还包括量子统计效应和垂直沟道方向的量子限制效应。研究表明,量子统计效应和量子限制效应对隧穿晶体管的电流电压特性,特别是正偏压温度不稳定性(PBTI)是非常重要的。另外,随着沟道长度和体硅厚度的缩小,隧穿晶体管的电流电压特性和可靠性都得到了改善,但在保持相同等效氧化层厚度的情况下,使用高介电常数的栅介质不会改善器件的电流电压特性及可靠性。更多还原

【Abstract】 Quantum and scaling effects on Id-Vg characteristics of double-gate tunneling field-effect transistor(TFET) and its degradation under positive bias temperature instability(PBTI) stress were investigated using 2-D device simulation tool.Quantum effects in TFET include band-to-band tunneling,quantum statistics,and quantum confinement in the direction perpendicular to the channel,which are shown to be important for TFET.Moreover,with reduced channel length and Si body thickness,both Id-Vg and its reliability were improved.For the same effective oxide thickness,however,high k gate dielectrics did not help to improve Id-Vg characteristics of the device and its reliability.更多还原