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Te vapor annealing of indium-doped CdMnTe crystals

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【作者】 张继军； 王林军； 闵嘉华； 秦凯丰； 施朱斌； 梁小燕；

【Author】 Zhang Jijun,Wang Linjun,Min Jiahua,Qin Kaifeng Shi Zhubin,and Liang Xiaoyan School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China

【机构】 School of Materials Science and Engineering,Shanghai University；

【摘要】 <正>Thermal annealing in Te vapor atmosphere was adopted to improve the properties of indium-doped Cd1-xMnxTe（x=0.2,CdMnTe） wafers grown by the vertical Bridgman method.The wafers before and after annealing were characterized by measuring the Te inclusions,etch pit density（EPD）,Mn composition,resistivity, and impurity.IR transmission microscopy and EPD measurements revealed that the densities of Te inclusions reduced from（5-9）×104 cm-3 to（2-4）×104 cm-3 and EPD from 105 cm-2 to 104 cm-2 after annealing. NIR transmission spectroscopy showed that the Mn composition increased by 0.002-0.005 mole fractions during the annealing.The resistivity of the wafers improved from（2.0-4.5）×108Ω·cm to（1.7-3.8）×109Ω·cm,which suggested that the deep-level donor of Te antisites was successfully introduced after annealing.Inductively coupled plasma-mass spectrometry（ICP-MS） revealed that the concentrations of impurities in the wafer decreased,which indicated the purifying effects of Te vapor annealing on the wafers.All the results demonstrate that the Te vapor annealing of the indium-doped CdMnTe crystal has positive effects on the crystallinity,resistivity and purity of CdMnTe wafers.

【Abstract】 Thermal annealing in Te vapor atmosphere was adopted to improve the properties of indium-doped Cd1-xMnxTe（x=0.2,CdMnTe） wafers grown by the vertical Bridgman method.The wafers before and after annealing were characterized by measuring the Te inclusions,etch pit density（EPD）,Mn composition,resistivity, and impurity.IR transmission microscopy and EPD measurements revealed that the densities of Te inclusions reduced from（5-9）×104 cm-3 to（2-4）×104 cm-3 and EPD from 105 cm-2 to 104 cm-2 after annealing. NIR transmission spectroscopy showed that the Mn composition increased by 0.002-0.005 mole fractions during the annealing.The resistivity of the wafers improved from（2.0-4.5）×108Ω·cm to（1.7-3.8）×109Ω·cm,which suggested that the deep-level donor of Te antisites was successfully introduced after annealing.Inductively coupled plasma-mass spectrometry（ICP-MS） revealed that the concentrations of impurities in the wafer decreased,which indicated the purifying effects of Te vapor annealing on the wafers.All the results demonstrate that the Te vapor annealing of the indium-doped CdMnTe crystal has positive effects on the crystallinity,resistivity and purity of CdMnTe wafers.

【关键词】 Cd1-xMnxTe； indium dopant； Te vapor annealing； resistivity； impurity；
【Key words】 Cd1-xMnxTe； indium dopant； Te vapor annealing； resistivity； impurity；
【基金】 supported by the National Natural Science Foundations of China(No.50902091);the Science and Technology Commission of Shanghai,China(No.11530500200);the Innovation Program of Shanghai Municipal Education Commission,China(No.12ZZ096);the Innovative Foundation of Shanghai University,China
  • 【文献出处】 Journal of Semiconductors ,半导体学报 , 编辑部邮箱 ,2013年03期
  • 【分类号】TG156.2
  • 【下载频次】42
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