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A wideband current-commutating passive mixer for multi-standard receivers in a 0.18 μm CMOS

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【作者】 包宽樊祥宁李伟王志功

【Author】 Bao Kuan,Fan Xiangning.,Li Wei,and Wang Zhigong Institute of RF-&OE-ICs,School of Information Science and Engineering,Southeast University,Nanjing 210096,China

【机构】 Institute of RF-&OE-ICs,School of Information Science and Engineering,Southeast University

【摘要】 This paper reports a wideband passive mixer for direct conversion multi-standard receivers.A brief comparison between current-commutating passive mixers and active mixers is presented.The effect of source and load impedance on the linearity of a mixer is analyzed.Specially,the impact of the input impedance of the transimpedance amplifier(TIA),which acts as the load impedance of a mixer,is investigated in detail.The analysis is verified by a passive mixer implemented with 0.18 m CMOS technology.The circuit is inductorless and can operate over a broad frequency range.On wafer measurements show that,with radio frequency(RF) ranges from 700 MHz to 2.3 GHz,the mixer achieves 21 dB of conversion voltage gain with a-1 dB intermediate frequency(IF) bandwidth of 10 MHz.The measured IIP3 is 9 dBm and the measured double-sideband noise figure(NF) is 10.6 dB at 10 MHz output.The chip occupies an area of 0.19 mm2 and drains a current of 5.5 mA from a 1.8 V supply.

【Abstract】 This paper reports a wideband passive mixer for direct conversion multi-standard receivers.A brief comparison between current-commutating passive mixers and active mixers is presented.The effect of source and load impedance on the linearity of a mixer is analyzed.Specially,the impact of the input impedance of the transimpedance amplifier(TIA),which acts as the load impedance of a mixer,is investigated in detail.The analysis is verified by a passive mixer implemented with 0.18 μm CMOS technology.The circuit is inductorless and can operate over a broad frequency range.On wafer measurements show that,with radio frequency(RF) ranges from 700 MHz to 2.3 GHz,the mixer achieves 21 dB of conversion voltage gain with a-1 dB intermediate frequency(IF) bandwidth of 10 MHz.The measured IIP3 is 9 dBm and the measured double-sideband noise figure(NF) is 10.6 dB at 10 MHz output.The chip occupies an area of 0.19 mm2 and drains a current of 5.5 mA from a 1.8 V supply.

【基金】 Project supported by the National Science and Technology Major Project (No.2010ZX03007-002-01);the State Key Development Program for Basic Research of China (No.2010CB327404)
  • 【文献出处】 Journal of Semiconductors ,半导体学报 , 编辑部邮箱 ,2013年01期
  • 【分类号】TN773
  • 【被引频次】8
  • 【下载频次】139
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