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多晶硅薄膜太阳电池电子辐照研究

Electronirradiation Study on Poly-Si Thin Films Solar Cells

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【作者】 廖华林理彬刘祖明李景天胡志华杨培志涂洁磊马逊姚朝晖郝瑞婷王书荣

【Author】 LIAO Hua1,LIN Li-bin2,LIU Zu-ming1,LI Jing-tian1,HU Zhi-hua1,YANG Pei-zhi1, TU Jie-lei1,MA Xun1,YAO Zhao-hua1,HAO Rui-ting1,WANG Shu-rong1(1.Advanced Technology and Manufacturing Key Lab on Renewable Energy Materials of the Ministry of Education of China,Solar Energy Research Institute,Yunnan Normal University,Yunnan Provincial Renewable Energy Engineering Key Laboratory,Kunming,650092,China; 2.Key Laboratory for Radiation Physics and Technology of Education Ministry of China,Department of Physics,Sichuan University,Chengdu,610064,China)

【机构】 可再生能源材料先进技术与制备教育部重点实验室云南师范大学太阳能研究所云南省农村能源工程重点实验室四川大学物理系辐射物理及技术国家教育部重点实验室

【摘要】 利用静电加速器对多晶硅薄膜太阳电池进行了电子辐照实验。电子能量为1MeV,分别以1014e/cm2、1015e/cm2和1016e/cm2电子辐照注量进行辐照,首次获得了多晶硅薄膜太阳电池在高注量的电子辐照后,性能衰降比晶体硅大的结果。结合太阳电池理论和半导体材料的电子辐照效应给出了合理的解释。

【Abstract】 In this paper,it has been carried that electron irradiation experiments on poly-Si thin films solar cells through static accelerator.Energy of electron is 1MeV.The electron fluence of 1×1014/cm2,1×1015/cm2 and 1×1016/cm2 were used.The results that were irradiated by high electron fluence have been obtained first time.It shows that performance of poly-Si thin films solar cells have serious decay,compared with that of crystalline Si solar cells.This result has been explained properly by combined with theories of solar cell and electron irradiation effect of semiconductor.

【基金】 国家自然科学基金云南联合基金资助项目(U1037604)
  • 【文献出处】 云南师范大学学报(自然科学版) ,Journal of Yunnan Normal University(Natural Sciences Edition) , 编辑部邮箱 ,2012年02期
  • 【分类号】TM914.4
  • 【被引频次】2
  • 【下载频次】161
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