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太赫兹扩展互作用振荡器输出结构的设计与分析
Design and Analysis of Output Structure for Terahertz Extended Interaction Oscillator
【摘要】 扩展互作用振荡器由于具有结构紧凑、工作电压低、效率高等特点成为真空电子学太赫兹辐射源的重要研究方向,在高分辨成像雷达、保密通信等方面具有广泛的应用前景。扩展互作用振荡器输出段是该器件输出THz的关键部分,其输出特性对扩展互作用振荡器的整体性能有着至关重要的作用。本文采用仿真软件模拟计算的方法,对扩展互作用振荡器输出段的S参数进行了较为详细的研究,并且对中心轴对称直渐变过渡波导、平面对称直渐变过渡波导和阶梯过渡波导式结构的输出结构进行了比较研究,本文的结果对后续EIO的设计与研究具有一定的参考意义和指导价值。
【Abstract】 Extended Interaction Oscillator(EIO),for which is the compact structure,low voltage and high efficiency,has been regarded as an important direction in Terahertz(THz) vacuum electronics.It can be widely used to high-resolution imaging radar and secure communication,etc.EIO output structure is a key part for transmission THz wave,its characteristics are important to the EIO.The S parameters of EIO out structure are studied with simulation in this paper.Moreover,the S parameters of symmetrical planar taper,single side tapered output structure and ladder output structure are compared.The results is meaningful to the continued EIO design and research
【Key words】 Extended Interaction Oscillator; Terahertz,Output Structure,S Parameter;
- 【文献出处】 微波学报 ,Journal of Microwaves , 编辑部邮箱 ,2012年S2期
- 【分类号】TN752
- 【被引频次】1
- 【下载频次】92