【摘要】 设计并验证了亚阈区MOS管作反馈大电阻的电阻反馈跨阻型(RTIA)非制冷热释电红外焦平面读出电路。在此基础上,对采用浅耗尽(Native)MOS管实现同样功能的RTIA进行仿真。与采用特殊高阻薄膜材料的RTIA不同,两种设计方案实现的RTIA不增加工艺步骤,有效降低了芯片的制造成本,再配合两管共源放大器,构建了像元下前置高增益放大器。此外,相对于亚阈区MOS RTIA,浅耗尽MOS RTIA可节省偏置电路,设计更加简洁。亚阈区MOS RTIA经流片验证,在5V电源电压下,实现增益为40dB、带宽为60kHz、输出摆幅为3V,符合混合或单片集成热释电探测器阵列的设计要求。更多还原

【Abstract】 A resistive trans-impedance amplifier(RTIA) readout circuit for pyroelectric uncooled focal plane array(UFPA) using sub-threshold MOSFET was designed and implemented.Based on sub-threshold MOSFET RTIA,a native MOSFET RTIA was proposed and simulated.For the two proposed RTIA’s,no additional materials and processes were needed,compared with RTIA using special high-impedance materials,and so manufacture cost was reduced.With 2-transistor common source amplifier,high gain amplifier could be constructed.The native MOS RTIA need no bias circuit,compared with sub-threshold RTIA,which simplified the design.The sub-threshold RTIA circuit was manufactured.Measured results showed that the circuit had a 40 dB gain,60 kHz bandwidth and 3 V output swing,which met the requirements of hybrid or monolithic pyroelectric detector arrays.更多还原