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基于负电容补偿技术的CMOS低噪声放大器设计
Design of a CMOS LNA Based on Negative Capacitance Compensation
【摘要】 利用负电容电路补偿技术,设计了一个工作于2.4GHz频段的差分低噪声放大器。基于CHRT 0.25μm RF CMOS工艺,对电路进行仿真。与传统的共源共栅结构相比,引入负电容电路对共源管的栅漏寄生电容进行补偿,可以使放大器的匹配度、噪声系数、线性度等关键性能指标得到显著改善。仿真结果显示,该放大器的正向功率增益为17.7dB,噪声系数为1dB,IIP3为-4.9dBm,功耗为25mW,具有良好的输入输出匹配。
【Abstract】 A low noise amplifier(LNA) operating at 2.4 GHz band was designed using negative capacitance circuit(NCC) compensation.The circuit was implemented in CHRT 0.25 μm RF CMOS process.Compared with the conventional cascode LNA,a negative capacitance circuit was used in the new LNA to compensate gate-drain parasitic capacitance of the common source stage,which significantly improved key parameters of the amplifier,such as matching,noise figure and linearity etc.Simulation results showed that the LNA had a forward power gain of 17.7 dB,a noise figure of 1 dB,an IIP3 of-4.9 dB,and good input/output impedance matching,while consuming 25 mW of power.
【Key words】 Low noise amplifier(LNA); Negative capacitance circuit(NCC); CMOS;
- 【文献出处】 微电子学 ,Microelectronics , 编辑部邮箱 ,2012年03期
- 【分类号】TN722.3
- 【下载频次】199