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C2F6 /O2 /Ar Plasma Chemistry of 60 MHz/2 MHz Dual-Frequency Discharge and Its Effect on Etching of SiCOH Low-k Film

C2F6 /O2 /Ar Plasma Chemistry of 60 MHz/2 MHz Dual-Frequency Discharge and Its Effect on Etching of SiCOH Low-k Films

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【作者】 袁颖； 叶超； 陈天； 葛水兵； 刘卉敏； 崔进； 徐轶君； 邓艳红； 宁兆元；

【Author】 YUAN Ying,YE Chao,CHEN Tian,GE Shuibing,LIU Huimin CUI Jin XU Yijun,DENG Yanhong,NING Zhaoyuan School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China

【机构】 School of Physics Science and Technology,Jiangsu Key Laboratory of Thin Films,Soochow University；

【摘要】 This work investigated C2F6/O2 /Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency (LF) power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2 /Ar plasma, the increase in the LF power prompted the reaction between O2 and C2F6 , resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.

【Abstract】 This work investigated C2F6/O2 /Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency (LF) power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2 /Ar plasma, the increase in the LF power prompted the reaction between O2 and C2F6 , resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.

【关键词】 fluorocarbon plasma； dual-frequency discharge； low-k films etching；
【Key words】 fluorocarbon plasma； dual-frequency discharge； low-k films etching；
【基金】 supported by National Natural Science Foundation of China(Nos.10975105,11075114)
  • 【文献出处】 Plasma Science and Technology ,等离子体科学与技术(英文版) , 编辑部邮箱 ,2012年01期
  • 【分类号】O484.4
  • 【下载频次】24
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