【摘要】 铝诱导晶化(AIC)技术制备多晶硅(Poly-Si)薄膜因处理温度低、退火时间短,且所制备的薄膜晶粒尺寸大而受到广泛关注。阐述了AIC法制备Poly-Si薄膜的交换机制,着重讨论了AIC过程中工艺条件对制备Poly-Si薄膜质量的影响,简单介绍了AIC制备的Poly-Si薄膜在太阳电池器件方面的研究现状,并指出提高AIC法制备的Po-ly-Si薄膜籽晶层及外延层质量以改善薄膜电池性能是今后的重点研究方向。更多还原

【Abstract】 Aluminum induced crystallization(AIC) technique is received extensive attention,by which polycrystalline silicon(poly-Si) films with large grain sizes can be successfully prepared at low annealing temperature and short process time.The aluminum induced layer exchange mechanism is described and the influences of preparation conditions on the quality of poly-Si thin films during the AIC process are reviewed.More over,the research status in solar cell devices of poly-Si thin films prepared by AIC is discussed and the focus of future research that improving the quality of poly-Si thin-film seed layer prepared by AIC and epitaxial layer is given.更多还原