节点文献

LPCVD法制备SiC-MoSi2涂层的形貌及沉积机理研究

Study on the Morphology and Deposition Mechanism of SiC-MoSi2 Coating Deposited by LPCVD

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 何子博李贺军史小红付前刚吴恒

【Author】 HE Zibo,LI Hejun,SHI Xiaohong,FU Qiangang,WU Heng(State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi ’ an 710072)

【机构】 西北工业大学凝聚态国家重点实验室

【摘要】 为提高碳/碳复合材料抗氧化性能,以甲基三氯硅烷(MTS)为先驱体,利用低压化学气相沉积(LPCVD)技术在碳/碳复合材料表面制备SiC-MoSi2涂层,通过XRD和SEM分析了不同沉积温度下涂层结构、物相组成及其沉积机理。结果表明,沉积温度对涂层的成分、结构及致密度有较大影响,在1100~1250℃均可成功得到SiC-MoSi2涂层,1100℃所得涂层结构疏松多孔;1250℃制备的涂层中间部位孔隙较多,表层为致密SiC涂层;1150~1200℃之间可得到均匀致密、以MoSi2颗粒为分散相、以CVD-SiC为连续相的SiC-MoSi2双相陶瓷涂层。

【Abstract】 In order to improve the anti-oxidation of C/C composites,SiC-MoSi2 coating was prepared by low pressure chemical vapor deposition(LPCVD) using methyltrichlorosilane(MTS) as precursor.The morphologies,composition and deposition mechanism of the coating were analyzed by scanning electron microscope(SEM) and X-ray diffraction(XRD).The results show that the deposition temperature has a great effect on the morphologies,composition and density of the coating.SiC-MoSi2 coating can be successfully produced during 1100℃ to 1250℃.The structure of the as-deposited coating is loose and brittle at 1100℃.And the middle of the layer is porous while dense in the outer layer that made up of SiC at 1250℃.In the temperature range of 1150-1200℃,uniform,dense SiC-MoSi2 dual phase ceramic coating can be obtained whose disperse phase is MoSi2 particles and continuous phase is CVD-SiC.

【基金】 国家自然科学基金(50832004;50902111);西北工业大学基础研究基金(GBKY1021)
  • 【文献出处】 材料导报 ,Materials Review , 编辑部邮箱 ,2012年20期
  • 【分类号】TB332
  • 【被引频次】1
  • 【下载频次】185
节点文献中: