【摘要】 采用超声波电沉积方法在钼衬底上制备了Cu,In双层膜,随后硒化得到了CuInAe₂薄膜。采用扫描电镜（AEM）、能谱仪（EDA）和X射线衍射仪（XRD）研究了薄膜的表面形貌、化学成分和相组成。结果表明:利用超声波电沉积可以得到颗粒细小、均匀致密的Cu层和In层;采用不同的工艺参数可以调节双层膜的Cu/In比率;双层膜在130℃下,退火6h后进行硒化,可得到符合化学计量比的CuInAe₂薄膜。更多还原

【Abstract】 The CuInSe₂ thin films were prepared on Mo substrate by selenization of Cu,In double layer films, which were obtained by ultrasonic-electrodepositing.Surface morphology,chemical composition and phases of the thin films sequence were investigated by scanning electron morphology（SEM）,energy dispersive spectroscopy （EDS）and X-ray diffraction（XRD ）.Results shown that the compact Cu and In films of the fine grains can be obtained by ultrasonic-electrodepositing and the Cu/In ratio can be adjusted by different processing parameters;the ideal stoichiometric CuInSe₂ film is obtained by selenization of Cu,In double layer films annealed at 130℃ for 6h.更多还原