Raman scattering investigation of C-doped a-SiO₂ after high energy heavy ion irradiations

【摘要】 Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0 × 10 17 or 1.2 × 10 18 ions/cm 2.These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0 × 10 11,1.0 × 10 12,5.0 × 10 12 ions/cm 2,or with 308 MeV Xe-ions to 1.0 × 10 12,1.0 × 10 13,1.0 × 10 14 ions/cm 2,respectively.Then the samples were investigated using micro-Raman spectroscopy.From the obtained Raman spectra,we deduced that Si-C bonds and sp 2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2.Furthermore,some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence.The possible modification process of C-doped a-SiO2 under swift heavy ion irradiations was briefly discussed.更多还原

【Abstract】 Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0 × 10 17 or 1.2 × 10 18 ions/cm 2.These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0 × 10 11,1.0 × 10 12,5.0 × 10 12 ions/cm 2,or with 308 MeV Xe-ions to 1.0 × 10 12,1.0 × 10 13,1.0 × 10 14 ions/cm 2,respectively.Then the samples were investigated using micro-Raman spectroscopy.From the obtained Raman spectra,we deduced that Si-C bonds and sp 2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2.Furthermore,some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence.The possible modification process of C-doped a-SiO2 under swift heavy ion irradiations was briefly discussed.更多还原