【摘要】 采用直流磁控溅射的方法在普通玻璃衬底上沉积Mo薄膜,研究了工作压强、溅射功率对Mo薄膜的电学性能、表面形貌的影响.实验表明,在我们所使用的压强范围内(0.2~2.0 Pa),溅射压强低时,沉积速率较快,制备出的薄膜导电性能亦较好;0.4 Pa时达到最佳值,电阻率为1.22×10-4Ω.cm,且扫描电镜(SEM)图显示薄膜具有致密、平整的表面形貌;在压强固定时(0.2 Pa),沉积速率随溅射功率(50~150 W)基本呈线性增加,且随溅射功率的增加,制备的Mo薄膜更加致密,显示出连续降低的电阻率;148 W时,电阻率为7.6×10-5Ω.cm.更多还原

【Abstract】 The morphology and conductivity of Mo films are prepared under different working pressure(0.2-2.0 Pa) and power(50-150 W)on the ordinary glass substrates by direct current magnetron sputtering.The experimental result shows that the surface morphology becomes coarse with increaded Ar pressure when power is fixed at 108W.And the conductivity becomes worse correspondingly.The highest resistivity,1.22×10-4 Ω·cm,is reached at a Ar pressure of 0.4 Pa.When working pressure is fixed at 0.2 Pa,the deposition rate of Mo films increases almost linearly with power.And the surface morphology of Mo film becomes smoother with power increasing.In addition,the resistivity becomes lower with increased power and the lowest resistivity of Mo film is obtained as 7.6x10-5 Ω·cm at 148 W.更多还原