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MPCVD单晶体金刚石的生长实验进展

Progress of Growth Experiment about MPCVD Single-Crystal Diamond

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【作者】 王礼胜陶隆凤肖滢陈美华

【Author】 WANG Lisheng1,TAO Longfeng1,XIAO Ying1,CHEN Meihua2 (1 College of Gemmological and Material Technics,Shijiazhuang University of Economics,Shijiazhuang 050031; 2 Gemmological Instiute,China University of Geosciences,Wuhan 430074)

【机构】 石家庄经济学院宝石与材料工艺学院中国地质大学珠宝学院

【摘要】 采用微波等离子体化学气相沉积(MPCVD)方法,在以往的实验条件上,改用CH4替代C2H5OH作为碳源,合成出单晶金刚石。使用宝石显微镜和环境扫描电子显微镜观察分析了MPCVD单晶金刚石膜的生长表面形貌。初步实验表明,在压力为12kPa,H2流量为300sccm,CH4流量为6sccm的生长环境中,可以合成出质量较好的MPCVD单晶金刚石。

【Abstract】 The Microwave plasma chemical vapor deposition(MPCVD) method is adopted,replaced the C2H5OH with CH4 as a carbon source and synthesized the single-crystal diamond on the basis of the past experience.The surface morphologies of MPCVD single-crystal diamond films are observed and analyzed by microscope and ESEM.The preliminary experiments show that the MPCVD single-crystal diamond with good quality can be synthesized at the growth conditions that the pressure was 12kPa,H2 flow rate is 300sccm,CH4 flow rate is 6sccm.

【关键词】 MPCVD单晶金刚石表面形貌
【Key words】 MPCVDsingle-crystalsurface morphologies
  • 【文献出处】 材料导报 ,Materials Review , 编辑部邮箱 ,2011年S2期
  • 【分类号】TQ164.8
  • 【下载频次】240
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