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化学气相沉积技术制备TiB2涂层研究
Research of TiB2 Coating Prepared by Chemical Vapor Deposition(CVD) Process
【摘要】 利用TiCl4-BCl3-H2-Ar反应体系,用化学气相沉积法(CVD)在石墨基体上沉积了TiB2涂层,研究了CVD工艺如沉积温度、气体流量、滞留时间等参数对涂层的物相组成、微晶尺寸、沉积速率、沉积形貌的影响。结果表明,沉积的涂层物相由TiB2组成,随着温度的升高,微晶尺寸增大;当沉积温度为900~950℃、气体总流量为1000mL/min和滞留时间超过2.1s时,CVD-TiB2涂层沉积速率较高;TiB2涂层颗粒尺寸随沉积温度的升高明显增大。并分析了TiB2涂层的沉积机理。
【Abstract】 The TiB2 coating on the surface of graphite is prepared by CVD method in TiCl4-BCl3-H2-Ar system.The influences of CVD process parameters,such as deposition temperature,gas flux,residence time,on the phase composition,crystallization size,deposition rate and surface growth morphology of TiB2 coating are studied.The experimental results show that the coating is composed of TiB2,with the increase of deposition temperature,the crystallization size increases;the deposition rate increases with the increase of temperature,enlargement of gas flux and elongation of residence time,deposition rate of CVD-TiB2 coating is high on condition that deposition temperature is between 900℃ and 950℃,total gas flux is 1000mL/min and residence time is greater than 2.1s;the particle size enlarges obviously with the rising of temperature,and the depositing mechanism of CVD-TiB2 coating is analyzed.
【Key words】 TiB2; chemical vapor deposition(CVD); phase composition; deposition rate; coating morphology;
- 【文献出处】 材料导报 ,Materials Review , 编辑部邮箱 ,2011年S2期
- 【分类号】TG174.4
- 【被引频次】6
- 【下载频次】256