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Voltage threshold behaviors of ZnO nanorod doped liquid crystal cell

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【作者】 郭玉冰； 陈涌海； 项颖； 曲胜春；

【Author】 Guo Yubing~(1,+),Chen Yonghai~1,Xiang Ying and Qu Shengchun 1 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China 2 School of Information Engineering,Guangdong University of Technology,Guangzhou 510006,China

【机构】 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences； School of Information Engineering,Guangdong University of Technology；

【摘要】 <正>With ZnO nanorods doped in only one poly(vinyl alcohol)(PVA) layer,we observed different threshold voltages with reverse DC voltages for a liquid crystal cell.The length and diameter of the ZnO nanorod used in our experiment were about 180 nm and 20 nm,respectively.When the PVA layer on the anodic side was doped, the threshold voltage was larger than that of the pure cell;conversely,when the PVA layer on the cathodic side was doped,the threshold voltage was smaller than that of the pure cell.These results can be explained by the internal electric field model.We also observed a resonance phenomenon with a low frequency AC voltage.

【Abstract】 With ZnO nanorods doped in only one poly(vinyl alcohol)(PVA) layer,we observed different threshold voltages with reverse DC voltages for a liquid crystal cell.The length and diameter of the ZnO nanorod used in our experiment were about 180 nm and 20 nm,respectively.When the PVA layer on the anodic side was doped, the threshold voltage was larger than that of the pure cell;conversely,when the PVA layer on the cathodic side was doped,the threshold voltage was smaller than that of the pure cell.These results can be explained by the internal electric field model.We also observed a resonance phenomenon with a low frequency AC voltage.

【关键词】 ZnO nanorods； liquid crystal； voltage threshold；
【Key words】 ZnO nanorods； liquid crystal； voltage threshold；
【基金】 Project supported by the National Natural Science Foundation ofChina(Nos.60625402,60990313,11074054,10674033);the State Key Development Program for Basic Research of China(Nos.2006CB604908,2006CB921607)
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2011年10期
  • 【分类号】O474
  • 【下载频次】45
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