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Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation

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【作者】 谭海仁； 游经碧； 张曙光； 高红丽； 尹志岗； 白一鸣； 张秀兰； 张兴旺； 屈盛；

【Author】 Tan Hairen~(1,+),You Jingbi~1,Zhang Shuguang,Gao Hongli Yin Zhigang~1,Bai Yiming~1,Zhang Xiulan~1, Zhang Xingwang~1,and Qu Sheng 1 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China 2 Eoplly New Energy Technology Co.Ltd.,Haian 226612,China

【机构】 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences； Eoplly New Energy Technology Co.Ltd.；

【摘要】 <正>The calculation results of the surface plasmon（SP） energy and Purcell factor of ZnO/NiSi2 demonstrate the possibility of using NiSi2 to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi2 layers synthesized by ion implantation,and the roughness of the NiSi2 layers spans a large range from 3 to 38 nm,providing favorable conditions for investigating SP-mediated emission.An 11-fold emission enhancement from the ZnO film on the roughest NiSi2 layer was obtained,which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.

【Abstract】 The calculation results of the surface plasmon（SP） energy and Purcell factor of ZnO/NiSi2 demonstrate the possibility of using NiSi2 to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi2 layers synthesized by ion implantation,and the roughness of the NiSi2 layers spans a large range from 3 to 38 nm,providing favorable conditions for investigating SP-mediated emission.An 11-fold emission enhancement from the ZnO film on the roughest NiSi2 layer was obtained,which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.

【关键词】 ZnO film； surface plasmon； NiSi2； photoluminescence；
【Key words】 ZnO film； surface plasmon； NiSi2； photoluminescence；
【基金】 Project supported by the National Natural Science Foundation of China(No.61076051);the Beijing Natural Science Foundation(No. 2102042)
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2011年10期
  • 【分类号】O472.3
  • 【下载频次】119
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