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A 14-bit wide temperature range differential SAR ADC with an on-chip multi-segment BGR

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【作者】 乔宁; 高见头; 赵凯; 杨波; 刘忠立; 于芳;

【Author】 Qiao Ning,Gao Jiantou,Zhao Kai,Yang Bo Liu Zhongli,and Yu Fang 1 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China 2 Department of Electronic Engineering,Tsinghua University,Beijing 100084,China

【机构】 Institute of Semiconductors,Chinese Academy of Sciences; Department of Electronic Engineering,Tsinghua University;

【摘要】 <正>A 14-bit low power self-timed differential successive approximation(SAR) ADC with an on-chip multisegment bandgap reference(BGR) is described.An on-chip multi-segment BGR,which has a temperature coefficient of 1.3 ppm/℃and a thermal drift of about 100μV over the temperature range of -40 to 120℃is implemented to provide a high precision reference voltage for the SAR ADC.The Gray code form is utilized instead of binary form mode control to reduce substrate noise and enhance the linearity of the whole system.Self-timed bit-cycling is adopted to enhance the time efficiency.The 14-bit ADC was fabricated in a TSMC 0.13μm CMOS process. With the on-chip BGR,the SAR ADC achieves an SNDR of 81.2 dB(13.2 ENOB) and an SFDR of 85.2 dB with a conversion rate of 2 MS/s at room temperature and can keep an ENOB of more than 12 bits at a conversion rate of 2 MS/s over the temperature range from -40 to 120℃.

【Abstract】 A 14-bit low power self-timed differential successive approximation(SAR) ADC with an on-chip multisegment bandgap reference(BGR) is described.An on-chip multi-segment BGR,which has a temperature coefficient of 1.3 ppm/℃and a thermal drift of about 100μV over the temperature range of -40 to 120℃is implemented to provide a high precision reference voltage for the SAR ADC.The Gray code form is utilized instead of binary form mode control to reduce substrate noise and enhance the linearity of the whole system.Self-timed bit-cycling is adopted to enhance the time efficiency.The 14-bit ADC was fabricated in a TSMC 0.13μm CMOS process. With the on-chip BGR,the SAR ADC achieves an SNDR of 81.2 dB(13.2 ENOB) and an SFDR of 85.2 dB with a conversion rate of 2 MS/s at room temperature and can keep an ENOB of more than 12 bits at a conversion rate of 2 MS/s over the temperature range from -40 to 120℃.

  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2011年08期
  • 【分类号】TN792
  • 【被引频次】4
  • 【下载频次】191
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