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A wideband CMOS VGLNA based on single-to-differential stage and resistive attenuator for TV tuners

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【作者】 韩科锋; 谈熙; 唐长文; 闵昊;

【Author】 Han Kefeng,Tan Xi~+,Tang Zhangwen,and Min HaoState Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China

【机构】 State Key Laboratory of ASIC & System,Fudan University;

【摘要】 <正>A wideband CMOS variable gain low noise amplifier(VGLNA) based on a single-to-differential(S2D) stage and resistive attenuator is presented for TV tuner applications.Detailed analysis of input matching,noise figure(NF) and linearity for S2D is given.A highly linear passive resistive attenuator is proposed to provide 6 dB attenuation and input matching for each gain stage.The chip was fabricated by a 0.18μm 1P6M CMOS process, and the measurements show that the VGLNA covers a gain range over 36.4 dB and achieves a maximum gain of 21.3 dB,a minimum NF of 3.0 dB,an IIP3 of 0.9 dBm and an IIP2 of 26.3 dBm at high gain mode with a power consumption less than 10 mA from a 1.8 V supply.

【Abstract】 A wideband CMOS variable gain low noise amplifier(VGLNA) based on a single-to-differential(S2D) stage and resistive attenuator is presented for TV tuner applications.Detailed analysis of input matching,noise figure(NF) and linearity for S2D is given.A highly linear passive resistive attenuator is proposed to provide 6 dB attenuation and input matching for each gain stage.The chip was fabricated by a 0.18μm 1P6M CMOS process, and the measurements show that the VGLNA covers a gain range over 36.4 dB and achieves a maximum gain of 21.3 dB,a minimum NF of 3.0 dB,an IIP3 of 0.9 dBm and an IIP2 of 26.3 dBm at high gain mode with a power consumption less than 10 mA from a 1.8 V supply.

【关键词】 S2D; VGLNA; TV tuner; attenuator; wideband; noise canceling;
【Key words】 S2D; VGLNA; TV tuner; attenuator; wideband; noise canceling;
【基金】 Project supported by the National Science Funding of China(No.60876019);the National S&T Major Project of China(No.2009ZX0131- 002-003-02);the Shanghai Rising-Star Program,China(No.09QA 1400300);the National Scientists and Engineers Service for Enterprise Program,China(No.2009GJC00046);the ASIC State-Key Laboratory Funding,China(No.09MS007)
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2011年07期
  • 【分类号】TN715
  • 【被引频次】2
  • 【下载频次】58
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