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Design of a passive UHF RFID tag for the ISO18000-6C protocol

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【作者】 王耀; 文光俊; 毛伟; 何艳莉; 朱学勇;

【Author】 Wang Yao,Wen Guangjun,Mao Wei,He Yanli and Zhu Xueyong RFIC Laboratory CICS,School of Communication and Information Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China

【机构】 RFIC Laboratory CICS,School of Communication and Information Engineering,University of Electronic Science and Technology of China;

【摘要】 <正>This paper presents a new fully integrated wide-range UHF passive RFID tag chip design that is compatible with the ISO18000-6C protocol.In order to reduce the die area,an ultra-low power CMOS voltage regulator without resistors and an area-efficient amplitude shift keying demodulator with a novel adaptive average generator are both adopted.A low power clock generator is designed to guarantee the accuracy of the clock under±4%. As the clock gating technology is employed to reduce the power consumption of the baseband processor,the total power consumption of the tag is about 14μW with a sensitivity of-9.5 dBm.The detection distance can reach about 5 m under 4 W effective isotropic radiated power.The whole tag is fabricated in TSMC 0.18μm CMOS technology and the chip size is 880×880μm~2.

【Abstract】 This paper presents a new fully integrated wide-range UHF passive RFID tag chip design that is compatible with the ISO18000-6C protocol.In order to reduce the die area,an ultra-low power CMOS voltage regulator without resistors and an area-efficient amplitude shift keying demodulator with a novel adaptive average generator are both adopted.A low power clock generator is designed to guarantee the accuracy of the clock under±4%. As the clock gating technology is employed to reduce the power consumption of the baseband processor,the total power consumption of the tag is about 14μW with a sensitivity of-9.5 dBm.The detection distance can reach about 5 m under 4 W effective isotropic radiated power.The whole tag is fabricated in TSMC 0.18μm CMOS technology and the chip size is 880×880μm~2.

【基金】 Project supported by the Guangdong Key Science and Technology Special Project of China(No.2008A090300001).
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2011年05期
  • 【分类号】TP391.44;TN402
  • 【被引频次】15
  • 【下载频次】166
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