【摘要】 介绍了GaN基HEMT微加速度计结构的设计、加工及测试过程,并对结果做出了分析。通过喇曼测试与ANSYS仿真软件相结合的方式进行应力测试分析,利用安捷伦4156C测试仪对GaN基HEMT进行不同应力状态及不同温度下IDS-VDS特性测试,并通过相关测试数据计算分析GaN基HEMT的压阻系数及其变化规律。结果表明:常温下GaN基HEMT的等效压阻系数为(2.47±0.04)×10-9Pa-1,高于Si的压阻系数(7.23±3.62)×10-10Pa-1。同时测试了HEMT在-40~50℃的输出特性,实验结果表明,HEMT饱和源漏电流随着温度的升高而下降。压阻系数具有负温度系数,且压阻系数随着温度的升高以226TPa-1/℃的速率减小。更多还原

【Abstract】 The designing,processing and testing of the GaN-based HEMT micro-accelerometer structure were introduced,and the results were analyzed.The stress testing was carried out by Raman spectrum test and ANSYS simulation software.The IDS-VDS characteristics of the GaN-based HEMT at different stress states and different temperatures were tested by Agilent 4156C.The piezoresistance coefficient and its variation of the GaN-based HEMT were calculated and analyzed with the relevant test data.The results show that the equivalent piezoresistance coefficient of the GaN-based HEMT at room temperature is(2.47±0.04)×10-9 Pa-1,which is higher than that of the silicon,i.e.(7.23±3.62)×10-10 Pa-1.At the same time,the output characteristic of the HEMT from-40 ℃ to 50 ℃ was tested.The result shows that the saturation source-drain current of the HEMT decreases with the increase of the temperature.The piezoresistance coefficient has a negative temperature coefficient,and the piezoresistance coefficient decreases at the rate of 226 TPa-1/℃ with the increase of the temperature.更多还原