【摘要】 典型的带隙基准电压源电路是由CMOS工艺产生的具有负温度系数的寄生横向BJT的发射结电压V_EB和具有正温度系数的热电压V_t相补偿产生零温度系数的基准带隙电压源.但是V_EB与温度不是线性关系,因此V_REF需要被校正.本文介绍了一种高精度自偏置多段二次曲率补偿的CMOS带隙基准电压源.采用0.5μm CMOS工艺、工作电压为3.3 V,该芯片室温下功耗为94μW.设计在0℃～75℃有效温度系数达到了0.7 ppm/℃.更多还原

【Abstract】 A typical bandgap voltage circuit is built up with the negative temperature coefficient of V_EB across the base-emitter of the parasitic BJT in CMOS process and the positive temperature coefficient of Vt.But the temperature dependence of V_EBis not linear,therefore,the V_REFneed be corrected.In this paper,a high precision self-bias multi-range second order curvature compensated CMOS bandgap voltage reference has been described.The new proposed bandgap voltage reference is implemented in 0.5μm CMOS technology and operates under 3.3 V supply voltage consuming 94μW at room temperature.The effictive temperature coefficient of this circuit achieves 0.7 ppm/in the temperature ranging from 0℃to 75℃.更多还原