【摘要】 以高纯（6N）Cd、Ge和As单质为原料,按CdGeAs₂的化学计量比配料,采用机械振荡和温度振荡相结合新方法合成出CdGeAs₂多晶锭,经X射线粉末衍射分析表明合成产物为高纯单相的CdGeAs₂多晶.用20℃/min的升温和降温速率对合成的CdGeAs₂多晶进行了DTA分析,结果显示CdGeAs₂多晶的熔化温度为669.24℃、结晶温度为615.55℃.根据DTA分析结果设计CdGeAs₂晶体生长温场,采用改进的Bridgman法生长出外观完整、尺寸为Φ15 mm× 45 mm的CdGeAs₂晶体,并对其进行解理实验,获得了完整、光滑的解理面,经XRD分析结果显示,连扫谱呈现{101}面的四级衍射峰,（101）面回摆谱峰尖锐、对称性好.更多还原

【Abstract】 Using high pure （6N） elements of cadmium （Cd）, germanium （Ga） and arsenic （As） as the raw material, in the chemistry ratio of CdGeAs₂, a CdGeAs₂ polycrystalline ingot with high mass density was synthesized by mechanical and temperature oscillation method.The X-ray diffraction （XRD） on the ingot showed that the ingot is high pure and single phase CdGeAs₂ polycrystalline.The melting and crystallizing temperatures of CdGeAs₂ polycrystalline from DTA curve at heating and cooling rates of 20 ℃/min were 669.24 ℃ and 615.55 ℃ respectively.On the basis of datum from the DTA, a temperature field of the CdGeAs₂ crystal growth was designed.A good integrity CdGeAs₂ single crystal with size of Φ15 mm×45 mm was grown by the modified Bridgman method.The cleavage test on the crystal was carried out by a single edge blade.An integral smooth cleavage face was obtained.It is found from the result of XRD analysis that the cleavage face is the face of （101） , the four-order diffraction peaks of the {101} faces are appeared and the rocking spectrum peak of the （101） face shows itself sharp and good symmetry.更多还原