【摘要】 本研究采用水热电耦合方法合成了BaZrO3薄膜。首先通过阴极放电等离子体(HCD-IP)在Si基片上沉积氮化锆(ZrN)薄膜,接着将包覆ZrN的Si基片侵入到水热电耦合装置中,其混合溶液为Ba(CH3COO)2和NaOH,在90℃的温度下工作1～15h。结果表明,在ZrN/Si基片上成功合成了立方BaZrO3薄膜。BaZrO3薄膜在ZrN上的生长速率比在块体Zr上的生长速率快,BaZrO3薄膜展示出纳米层结构,其厚度在15h后可达到2μm。本文讨论了溶液的反应温度和反应时间对薄膜形貌和厚度的影响。更多还原

【Abstract】 Barium zirconate(BaZrO3)films were successfully prepared by a novel hydrothermal galvanic couple technique. Zirconium nitride films were first deposited on Si substrates by hollow cathode discharge plasma ion plating(HCD-IP).Subsequently,the ZrN coated Si specimens were soaked in Ba(CH3COO)2 and NaOH mixed alkaline solutions with a galvanic couple setup at 90℃for 1～15 h.The growth rate of BaZrO3 films on ZrN was much faster than that on bulk-Zr. The BaZrO3 films exhibited a nanolayered structure and the thickness could reach about 2μm after 15h in the solution at 90℃.The dependence of the film morphology and thickness on the reaction temperature and time in the solution were discussed.更多还原