【摘要】 文中首次提出在Ni中掺入夹层W的方法来提高NiSi的热稳定性。具有此结构的薄膜,经600℃～800℃快速热退火后,薄层电阻保持较低值,小于2Ω/□。经Raman光谱分析表明,薄膜中只存在NiSi相,而没有NiSi2生成。Ni(W)Si的薄层电阻由低阻转变为高阻的温度在800℃以上,比没有掺W的镍硅化物的转变温度的上限提高了100℃。Ni(W)Si/Si肖特基势垒二极管能够经受650℃～800℃不同温度的快速热退火,肖特基接触特性良好,肖特基势垒高度为0.65eV,理想因子接近于1。更多还原

【Abstract】 A novel technique to add a thin W interlayer in the nickel film was firstly put forward to improve the thermal stability of nickel silicide.After RTA temperature about 600℃-800℃,N(iW)Si film exhibited low sheet resistances,whose value was less than 2 Ω /□.Raman spectral analysis both show there existed NiSi phase but no NiSi2 phase in the N(iW)Si film.The transformation temperature from low resistance phase to high resistance phase increased to 800℃ at least,which was 100℃ higher than that of NiSi.The electrical characteristics of fabricated N(iW)Si/Si Schottky Barrier Diode was satisfactory.The barrier height and the ideal factor of the devices were about 0.65eV and close to 1.It further improves that the presence of W element in Nickel silicide is effective in promoting thermal stability and electrical characteristics of Nickel monosilicide.更多还原