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孪晶SiC纳米线的制备、结构及光致发光(英文)
Synthesis, Structure and Photoluminescence of Twinned SiC Nanowires
【摘要】 以含碳的二氧化硅干凝胶为原料,采用碳热还原法制备了孪晶结构β-SiC纳米线。通过场发射扫描电镜、X射线衍射和高分辨透射电镜等测试分析表明,SiC纳米线具有六角形的横截面,直径50~300nm,沿着纳米线生长方向具有准周期性的(111)面孪晶结构。结合气-固生长机理及(111)密排面堆垛次序的变化讨论了孪晶纳米线的生长机理。光致发光谱表明,SiC纳米线在470nm附近有数个相对β-SiC体单晶的发光特征蓝移,且分裂的发光峰。这种发光现象可解释为堆垛层错导致相互隔离的β-SiC纳米片段的量子尺寸效应。
【Abstract】 Twinned β-SiC nanowires were synthesized by the carbothermal reduction of a carbonaceous silica xerogel. Results of field emission scanning electron microscopy, X-ray diffraction and high-resolution transmission electron microscopy indicate the twinned β-SiC nanowires possess a hexagonal cross section and have typical diameters of 50-300 nm. A quasi-periodically twin structure with (111) plane as the boundary along the SiC nanowires was observed. The formation of the twinned nanowires was discussed based on the vapor-solid growth mechanism and transition of stacking faults of the hexagonal {111} close-packed planes. Some separated blue-shifted photoluminescence peaks around 470 nm were measured. The separated blue-shifted emission peaks are thought due to the quantum confinement of nanoscaled twin segments along each nanowire rather than the apparent diameter of the nanowires.
- 【文献出处】 稀有金属材料与工程 ,Rare Metal Materials and Engineering , 编辑部邮箱 ,2010年S2期
- 【分类号】TB383.1
- 【被引频次】1
- 【下载频次】201