【摘要】 采用电子束熔炼方式,利用铝的蒸发系数较大的特点通过蒸发去除硅中的杂质铝。将实验的实测值与理论计算的蒸发量、损失量等加以比较,得到了铝在电子束下的蒸发去除速率由其在硅中扩散过程所决定的结论,并对铝的去除量与硅的损失量之间关系进行分析。更多还原

【Abstract】 Aluminum impurity with high vapor pressure in metallurgical grade silicon was removed effectively by electron beam melting.Comparing the calculated value and the measure evaporation loss,the mechanism of aluminum evaporation through the surface of the molten silicon can be assumed that the removal rate-limiting step of aluminum impurity in silicon is diffusion step.In addition,the relationship between the removal amount of the aluminum and silicon loss is also discussed.更多还原