【摘要】 为了研究SiN盖帽层在Si中引入应变的机理与控制,利用高分辨X射线衍射(HRXRD)技术分析了Si中应变的各向异性以及与盖帽层厚度的关系。研究发现,盖帽层厚度低于300nm时,应变量与厚度呈近线性关系,随后增加趋缓,最终达到一饱和值;同时,应变在不同晶向表现出明显的各向异性,表层应变Si与未应变Si衬底在(004)晶面上的衍射峰重叠在一起,而(111)晶面的2个衍射峰可明显地被分离,且倾角对Si衬底衍射峰半高宽具有明显的展宽。更多还原

【Abstract】 To analyze the mechanism of strain in Si induced by SiN and control strain,the relation of the strain in Si with thickness of SiN cap is studied using high-resolution X-ray diffraction (HRXRD). The results show that the strain degree is a linear relationship with the cap layer thickness less than 300nm,and then increases slowly,reaches a saturation value at the 450nm thickness. Meanwhile,the strain shows obviously anisotropy at different directions. The diffraction peak of strained-Si does not separate from the peak of substrate on (004) crystal plane,but there is a clear separation of the two peaks on (111) plane,and tilt broadens the half width of diffraction peak.更多还原