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Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region

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【作者】 何进； 郑睿； 张立宁； 张健； 林信南； 陈文新；

【Author】 He Jin Zheng Rui Zhang Lining Zhang Jian Lin Xinnan and Chan Mansun (1 Department of Electronics and Computer Engineering,Hong Kong University of Science & Technology,Hong Kong,China) (2 Micro & Nano Electric Device and Integrated Technology Group,Key Laboratory of Integrated Microsystems,Peking University, Shenzhen Graduate School,Shenzhen 518055,China)

【机构】 Department of Electronics and Computer Engineering Hong Kong University of Science & Technology； Micro & Nano Electric Device and Integrated Technology Group,Key Laboratory of Integrated Microsystems,Peking University,Shenzhen Graduate School； Micro & Nano Electric Device and Integrated Technology Group Key Laboratory of Integrated Microsystems,Peking University,Shenzhen Graduate School；

【摘要】 <正>A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate(SRG) MOSFET from the accumulation to strong inversion region.The original equation is derived from the exact solution of a simplified Poisson equation and then the empirical correction is performed from the mathematical condition required by the continuity of the solution,which results in a continuous surface potential versus voltage equation,allowing the surface potential and the related derivatives to be described by an analytic solution from the accumulation to strong inversion region and from linear to the saturation region accurately and continuously.From these results,the dependences of surface potential and centric potential characteristics on device geometry are analyzed and the results are also verified with the 3-D numerical simulation from the aspect of accuracy and continuity tests.

【Abstract】 A continuous surface potential versus voltage equation is proposed and then its solution is further discussed for a long channel intrinsic surrounding-gate(SRG) MOSFET from the accumulation to strong inversion region.The original equation is derived from the exact solution of a simplified Poisson equation and then the empirical correction is performed from the mathematical condition required by the continuity of the solution,which results in a continuous surface potential versus voltage equation,allowing the surface potential and the related derivatives to be described by an analytic solution from the accumulation to strong inversion region and from linear to the saturation region accurately and continuously.From these results,the dependences of surface potential and centric potential characteristics on device geometry are analyzed and the results are also verified with the 3-D numerical simulation from the aspect of accuracy and continuity tests.

【关键词】 non-classical CMOS； surrounding-gate MOSFETs； device physics； surface potential； accuracy； continuity issue；
【Key words】 non-classical CMOS； surrounding-gate MOSFETs； device physics； surface potential； accuracy； continuity issue；
【基金】 Project supported by the National Natural Science Foundation of China(No.60876027);the Competitive Earmarked Program from the Research Grant Council of Hong Kong SAR,China(No.HKUST6289/04E);the Industry,Education and Academy Cooperation Program of Guangdong Province,China(No.2009B090300318);the Fundamental Research Project of Shenzhen Science & Technology Foundation,China(No.JC200903160353A).
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2010年06期
  • 【分类号】TN386.1
  • 【被引频次】1
  • 【下载频次】57
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