【摘要】 介绍了利用ICP设备,使用SF6基气体对4H-SiC衬底进行背面通孔刻蚀的技术。研究了金属刻蚀掩模、刻蚀气体中O2含量的变化、反应室压力、RF功率和ICP功率等各种条件对刻蚀结果产生的影响,重点对刻蚀气体中O2含量和反应室压力两个条件进行了优化。通过对刻蚀结果的分析,得出了适合当前实际工艺的优化条件,实现了厚度为100μm、直径为70μm的SiC衬底GaN HEMT和单片电路的背面通孔刻蚀,刻蚀速率达700nm/min,SiC和金属刻蚀选择比达到60∶1。通过对工艺条件的优化,刻蚀出倾角为75°～90°的通孔。更多还原

【Abstract】 The etching technology of 4H-SiC via holes using SF 6 gas by inductively coupled plasma(ICP)was presented.The influences of the metal mask,variation of O 2 content in the etching gases,chamber pressure,RF power and ICP power on the etching result were investigated,with emphasis on the optimization of the O 2 content in the etching gases and the chamber pressure.Through analyzing the etching results,the optimal experimental parameters fitting for current etching process were achieved.Thus,the via hole etching(Φ =70 μm)of GaN HEMT and MMIC on 100 μm SiC substrates was realized with the etching rate of 0.7 μm/min,and the etching selectivity ratio of SiC and metal reached 60∶1.The slope range of SiC via hole etching was 75°-90° by the optimized process.更多还原