【摘要】 针对光电耦合器中使用的发光二极管(LED)进行了不同的方案设计,并对相关的光电耦合器进行了钴-60γ总剂量试验研究,比较了光电耦合器的主要参数——电流传输比辐照前后的变化,从而得到了优化的发光二极管设计。采用自主设计生产的发光管材料制作了发光二极管,同时利用中国电子科技集团公司第十三研究所研制的探测器、晶体管以及陶瓷管壳制作了光电耦合器。在4 mA偏置下,经过300 krad(Si)γ(辐照剂量率为50 rad(Si)/s)电离总剂量辐照后,电流传输比平均下降了31.5%,优于国外光电耦合器的已知水平。在抗辐射光电耦合器中,采用正装、小发散角结构的发光二极管可进一步提高其抗辐射性能。更多还原

【Abstract】 Some different design methods of LED used for optocoupler are described,and the samples of optocoupler radiated by cobalt-60 as a gamma radiation resource are studied.The better design of LED is gained by means of comparing the CTR variety of optocoupler samples before and after total dose radiation.The LED was fabricated using LED materials designed by ourselves,while the optocoupler samples were made using detectors,transistors and ceramic tubes which were fabricated by the 13th Research Institute of China Electronics Technology Group Coperation.The average CTR drops 31.5% at 4 mA LED current after 300 krad(Si) total dose(dose rate is 50 rad(Si)/s),which is better than the foreign optocoupler known.It will be further improved on gamma radiation performance of the optocoupler using LED with small divergence angle.更多还原