【摘要】 通过分析InGaP/GsAsHBT器件的热学和电学特点,结合HBT大功率放大器芯片在技术性能、稳定性、可靠性及尺寸等方面的要求,通过优化设计HBT功率器件单元和匹配电路,开发了一个大功率、高效率、小尺寸的ISM波段功率放大器单片集成电路。该三级放大器的各级器件单元的发射极面积分别为320μm2,1280μm2,5760μm2,芯片内部包括了输入、输出50Ω匹配电路,面积仅为1.9mm×2.1mm。放大器采用5V单电源供电,在2.4～2.5GHz频率范围内线性增益为27dB,2dB增益压缩点输出饱和功率达到37dBm,功率附加效率为46%。更多还原

【Abstract】 The thermal and electrical performance of the InGaP/GsAs HBT device was analyzed.Considering the characteristic of good high power HBT amplifier chip,such as the performance,stability,reliability and size,an optimized HBT power cell and matching circuit were designed.A high-power,high efficient and small size ISM band MMIC power amplifier was developed.The three-stage MMIC amplifier fabricated with 320 μm2,1 280 μm2,5 760 μm2 emitter area and the die size including the input and output 50 Ω matching circuit is 1.9mm×2.1 mm.When powered by a single 5 V power supply,it exhibits an output power of 37 dBm at 2 dB of gain compression point,a linear gain of 27 dB and an associated PAE of 46% in the frequency range of 2.4 to 2.5 GHz.更多还原