节点文献
磁控溅射氮化铝薄膜取向生长工艺研究
Growth Process of Preferential Orientation of AlN Thin Films by Magnetron Reactive Sputtering
【摘要】 氮化铝薄膜取向性直接影响到薄膜的压电特性和声波速度,是薄膜体声波谐振器/滤波器工艺过程中最重要的环节之一。对AlN薄膜材料的反应磁控溅射沉积工艺进行了研究,通过对AlN薄膜的取向性分析及其与工艺条件的比较,优化了取向性AlN薄膜的生长工艺条件,制备出了高取向和高致密的AlN薄膜。
【Abstract】 Orientation of AlN thin film is very important to its piezoelectric characteristic and acoustic wave velocity,it is one of the most important key factors in film bulk acoustic wave resonator/filter fabrication.This work investigates reactive magnetron sputtering deposition of AlN thin film,by comparing orientation of deposited AlN thin films under different deposition conditions,the fabrication recipe is refined,and a condensed high orientation AlN film is made.
【基金】 武汉理工大学校基金(XJJ2004112)
- 【文献出处】 武汉理工大学学报 ,Journal of Wuhan University of Technology , 编辑部邮箱 ,2009年12期
- 【分类号】TB383.2
- 【被引频次】6
- 【下载频次】526