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S掺杂纤锌矿ZnO晶体结构及电子性质的第一性原理研究

First-principles study of the crystal structures and electronic properties of S doped wurtzite ZnO

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【作者】 楚合营刘朝霞邱雨李晓勤胡芸莎赵冬秋李蕴才

【Author】 Chu Heying1 Liu Zhaoxia1 Qiu Yu1 Li Xiaoqin1 Hu Yunsha1 Zhao Dongqiu2 Li Yuncai2(1 College of Mechanical and Electrical Engineering,Tarum university,Alar,Xinjiang 843300)(2 Laboratory of Special Functional Materials,Henan University,Kaifeng,Henan 475001)

【机构】 塔里木大学机械电气化工程学院河南大学特种功能材料重点实验室

【摘要】 本文采用基于密度泛函理论的CASTEP模拟软件研究了本征纤锌矿ZnO、ZnS以及S掺杂ZnO所形成的纤锌矿ZnO1-xSx化合物的晶体结构及电子性质,计算结果显示纤锌矿ZnO1-xSx化合物的晶格常数随S的掺杂量的增加呈线性增加关系;S 3p态电子决定价带顶的位置,且基本上不因S含量的改变而发生移动;Zn 4s态电子决定导带底的位置,并随S掺入量的增加先向低能端移动而后向高能端移动。研究发现在ZnO1-xSx化合物中Zn和S主要靠共价键结合,而Zn和O主要靠离子键结合,随S掺入量的增加Zn-O离子键不断减少,而Zn-S共价键不断增加是造成ZnO1-xSx化合物带隙先减小而后增加的根本原因。

【Abstract】 The crystal structures and electronic properties of wurtzite ZnO,ZnS and S doped ZnO have been investigated by using density-functional theory simulating package CASTEP.The calculation results indicate:the crystal constants increase with the quantity of S doping wurtzite ZnO;the top position of the valence band is determined by the S 3p electron state and it does not shift with the thickness of S-doping;the bottom position of the conduction band is determined by the Zn 4s electron state and it can shift to a lower energy position at first and then shift to a higher energy position with increasing S concentrations,the band gap of ZnO1-xSx is least when x is equal to 0.5.It is essential reason that the transformation from Zn-O electrovalent bond to Zn-S covalent bond with the thickness of S doping wurtzite ZnO.

  • 【文献出处】 塔里木大学学报 ,Journal of Tarim University , 编辑部邮箱 ,2009年02期
  • 【分类号】TN304
  • 【被引频次】5
  • 【下载频次】498
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