【摘要】 采用磁控溅射法在单晶硅衬底上制备了SiCN及Cu/SiCN薄膜,并对试样进行了退火处理。利用原子力显微镜(AFM)、X射线衍射(XRD)、四探针测试仪(FPP)研究了SiCN薄膜的表面形貌、物相结构及在Cu/SiCN/Si结构中SiCN薄膜对铜与硅的阻挡性能。结果表明,沉积态SiCN薄膜为无定型的非晶结构,晶化温度在1000℃以上;SiCN薄膜作为Cu的扩散阻挡层有较好的热稳定性及阻挡性,阻挡失效温度在600℃左右。更多还原

【Abstract】 SiCN thin films and Cu/SiCN/Si structures were fabricated through magnetron sputtering.And the rapid thermal annealing(RTA) processing were undergoing for some thin-films samples.The thin-films surface morphology,crystal structure and electronic properties were characterized by atomic force microscopy(AFM),X-ray diffraction(XRD),Alpha step IQ profiler and Four-point probe(FPP).The results show that the as-deposited SiCN thin-films were amorphous structure,and their crystallization temperature is upon 1000℃.The Cu/SiCN/Si structure has a good thermal stability,and the SiCN thin-films are still able to prevent the diffusion reaction between Cu and Si interface after 5min RTA processing at 600℃.更多还原