InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures

【摘要】 Several μ-bridge structures for InP-based heterojunction bipolar transistors (HBTs) are reported.The radio frequency measurement results of these InP HBTs are compared with each other.The comparison shows that μ-bridge structures reduce the parasites and double μ-bridge structures have a better effect.Due to the utilization of the double μ-bridges,both the cutoff frequency fT and also the maximum oscillation frequency fmax of the 2×12.5 μm2 InP/InGaAs HBT reach nearly 160 GHz.The results also show that theμ-bridge has a better effect in increasing the high frequency performance of a narrow emitter InP HBT.更多还原

【Abstract】 Several μ-bridge structures for InP-based heterojunction bipolar transistors (HBTs) are reported.The radio frequency measurement results of these InP HBTs are compared with each other.The comparison shows that μ-bridge structures reduce the parasites and double μ-bridge structures have a better effect.Due to the utilization of the double μ-bridges,both the cutoff frequency fT and also the maximum oscillation frequency fmax of the 2×12.5 μm2 InP/InGaAs HBT reach nearly 160 GHz.The results also show that theμ-bridge has a better effect in increasing the high frequency performance of a narrow emitter InP HBT.更多还原