Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

【摘要】 The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas(2DEG)is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors(AlGaN/GaN HFETs).Current–voltage(I–V)characteristics for ungated AlGaN/GaN heterostructures and capacitance–voltage(C–V)characteristics for AlGaN/GaN HFETs are obtained,and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated.It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50%compared with the electron mobility of Hall measurements.We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain,causing the decrease in the electron mobility.更多还原

【Abstract】 The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas(2DEG)is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors(AlGaN/GaN HFETs).Current–voltage(I–V)characteristics for ungated AlGaN/GaN heterostructures and capacitance–voltage(C–V)characteristics for AlGaN/GaN HFETs are obtained,and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated.It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50%compared with the electron mobility of Hall measurements.We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain,causing the decrease in the electron mobility.更多还原