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Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films

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【作者】 丁武昌； 左玉华； 张云； 郭剑川； 成步文； 余金中； 王启明； 郭亨群； 吕蓬； 申继伟；

【Author】 Ding Wuchang1, , Zuo Yuhua1, Zhang Yun1, Guo Jianchuan1, Cheng Buwen1, Yu Jinzhong1, Wang Qiming1, Guo Hengqun2, Lü Peng2, and Shen Jiwei2 (1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China) (2 College of Information Science and Engineering, Huaqiao University, Quanzhou 362021, China)

【机构】 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences； College of Information Science and Engineering, Huaqiao University；

【摘要】 Er-doped silicon-rich silicon nitride (SRN) films were deposited on silicon substrate by an RF magnetron reaction sputtering system. After high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. Besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to 2H11/2 to the ground state of Er3+ are observed. Raman spectra and HRTEM measurements have been performed to investigate the structure of the films, and possible excitation processes are discussed.

【Abstract】 Er-doped silicon-rich silicon nitride (SRN) films were deposited on silicon substrate by an RF magnetron reaction sputtering system. After high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. Besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to 2H11/2 to the ground state of Er3+ are observed. Raman spectra and HRTEM measurements have been performed to investigate the structure of the films, and possible excitation processes are discussed.

【关键词】 photoluminescence； silicon nitride； Er doping；
【Key words】 photoluminescence； silicon nitride； Er doping；
【基金】 supported by the National Natural Science Foundation of China(No.60336010);the State Key Development Program for Basic Research of China(No.2006CB302802)
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2009年10期
  • 【分类号】TN304
  • 【下载频次】48
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