An X-band GaN combined solid-state power amplifier

【摘要】 Based on a self-developed AlGaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate,an X-band GaN combined solid-state power amplifier module is fabricated.The module consists of an AlGaN/GaN HEMT,Wilkinson power couplers,DC-bias circuit and microstrip line.For each amplifier,we use a bipolar DC power source.Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier.At the same time,branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers.Microstrip stub lines are used for input matching and output matching.Under Vds=27 V,Vgs=-4.0 V,CW operating conditions at 8 GHz,the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%,and output power of 41.46 dBm(14 W),and the power gain compression is 3 dB.Between 8 and 8.5 GHz,the variation of output power is less than 1.5 dB.更多还原

【Abstract】 Based on a self-developed AlGaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate,an X-band GaN combined solid-state power amplifier module is fabricated.The module consists of an AlGaN/GaN HEMT,Wilkinson power couplers,DC-bias circuit and microstrip line.For each amplifier,we use a bipolar DC power source.Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier.At the same time,branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers.Microstrip stub lines are used for input matching and output matching.Under Vds=27 V,Vgs=-4.0 V,CW operating conditions at 8 GHz,the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%,and output power of 41.46 dBm(14 W),and the power gain compression is 3 dB.Between 8 and 8.5 GHz,the variation of output power is less than 1.5 dB.更多还原