节点文献

Preparation and characterization of CuO nanowire arrays

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 于冬亮葛传楠都有为

【Author】 Yu Dongliang1, 2, Ge Chuannan1, 2, and Du Youwei1 (1 National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China) (2 Department of Physics, Jiangsu Institute of Education, Nanjing 210013, China)

【机构】 National Laboratory of Solid State Microstructures Department of Physics, Nanjing UniversityDepartment of Physics, Jiangsu Institute of Education

【摘要】 CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 ?C in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current–voltage curve of the CuO nanowires is nonlinear.

【Abstract】 CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 ?C in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current–voltage curve of the CuO nanowires is nonlinear.

【基金】 supported by the State Key Development Programfor Basic Research of China(No.G2500CB6236057)
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2009年07期
  • 【分类号】TB383.1
  • 【被引频次】1
  • 【下载频次】98
节点文献中: