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Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

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【作者】 朱夏明； 吴惠桢； 王双江； 张莹莹； 蔡春锋； 斯剑霄； 原子健； 杜晓阳； 董树荣；

【Author】 Zhu Xiaming1,Wu Huizhen1,2Wang Shuangjiang1,Zhang Yingying1,Cai Chunfeng1,Si Jianxiao1,Yuan Zijian1,Du Xiaoyang3,and Dong Shurong3(1 Department of Physics,Zhejiang University,Hangzhou 310027,China)(2 State Key Laboratory of Modern Optical Instrumentations,Zhejiang University,Hangzhou 310027,China)(3 ESD Laboratory,Institute of Microelectronics and Photoelectronics,Zhejiang University,Hang Zhou 310027,China)

【机构】 Department of Physics,Zhejiang University； State Key Laboratory of Modern Optical Instrumentations,Zhejiang University； ESD Laboratory,Institute of Microelectronics and Photoelectronics,Zhejiang University；

【摘要】 Using NH3 as nitrogen source gas,N-doped ZnO(ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature.The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity.As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor.The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

【Abstract】 Using NH3 as nitrogen source gas,N-doped ZnO(ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature.The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity.As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor.The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

【关键词】 ZnO； N-doping； resistivity； photoluminescence； thin film transistors；
【Key words】 ZnO； N-doping； resistivity； photoluminescence； thin film transistors；
【基金】 supported by the National Natural Science Foundation of China (No. 60676003);the Natural Science Foundation of ZhejiangProvince (No. Z406092).
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2009年03期
  • 【分类号】TN304;TN321.5
  • 【被引频次】5
  • 【下载频次】91
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