【摘要】 采用低成本、高效率的压印技术实现了高密度相变存储器(PCRAM)存储阵列的制备,开发出Si2Sb2Te5(SST)新材料的4Gbit/inch2存储阵列,存储单元面积为0.04μm2;利用SEM观测压印获得的光刻胶图形阵列以及刻蚀后的SST存储阵列,其单元外形均具有高度的一致性,且单元特征尺寸的3倍标准差均小于6nm;利用AFM研究了SST存储单元的I-V特性,阈值电压为1.56V,高、低电阻态阻值变化超过两个数量级。实验结果表明了SST新材料及压印技术在PCRAM芯片中的应用价值。更多还原

【Abstract】 High-density phase change material arrays fabricated by a low cost and high efficient method were considered to be able to speed up research and development of the phase change random access memory (PCRAM),which was characteristic of low-voltage,low-power,fast reading/writing.The Si2Sb2Te5 (SST) based PCRAM array with density of 4 Gbit/inch2 was fabricated by UV-imprint lithography (UV-IL),the PCRAM cell was with size of 0.04 μm2. Dimension stability of the array cell was analyzed with SEM,in each case,the 3σ values was less than 6 nm.Due to the small size of PCRAM cell,I-V performance was measured by a conductive nano-tip on an atomic fore microscope and the typical I-V curve of the cells was with a threshold voltage of 1.56 V.The resistance contrast of high-resistance state and low-resistance state is more than two orders according to the I-V curve.The results show that the SST and UV-IL have potential enormous application in the low-voltage,high-speed PCRAM chip.更多还原