节点文献
高隔离度宽频段组合式RF-MEMS开关的设计
Design of High Isolation Contact/Capacitive RF MEMS Switch with Wide Bandwidth
【摘要】 接触式与电容耦合式两类RFMEMS开关各自在一定的频段内,都具有较高的隔离度,但仍然很难满足微波控制系统中对高隔离度的要求。为了获得全波段高隔离度RFMEMS开关,单元开关很难达到要求,在此目标要求下,提出了组合式RFMEMS开关的设计,分别利用HFSS软件对各单元进行结构参数优化,再将两者集成在一起,得到的组合式RFMEMS开关,这种组合式开关在0~20GHz时隔离度都高于-60dB,在(≤5GHz),隔离度高于-70dB,这是一般单元开关及其他半导体固态开关所无法企及的,而且,在DC~20GHz范围内,开关的插入损耗小于-0.20dB,而且并没因隔离度的提高,牺牲了插入损耗。
【Abstract】 The DC contact RF MEMS switch and the capacitive RF MEMS switch show high isolation for special frequency respectively,but they are difficult to satisfy the application of high isolation in the microwave control system.In order to obtain high isolation for all microwaves,an integrated contact/capacitive RF MEMS switch was reported instead of the unit switch.The configuration parameters of the unit switches were optimized using HFSS(high frequency structure simulator).The unit switches were integrated after the parameter optimization.Simulation isolation is higher than-60 dB over the entire bandwidth(0~20 GHz),and it can attain an isolation over-70 dB from DC up to 5 GHz.Moreover the simulation insertion loss is less than-0.2 dB from DC up to 20 GHz without sacrificing the insertion loss due to the improvement of isolation,the high performance of the integrated switch is reachless for these unit switches and other semiconductor solid-state switches.
【Key words】 contact/capacitive RF MEMS switch; insertion loss; isolation; microwave control system;
- 【文献出处】 半导体技术 ,Semiconductor Technology , 编辑部邮箱 ,2009年03期
- 【分类号】TM564
- 【下载频次】150